National Institute Of Technology,Kurukshetra

DEPARTMENT OF ELECTRONICS&COMMUNICATION ENGG.

Faculty

Name : Sudhanshu Choudhary
Designation : Assistant Professor
Qualification : PhD (Indian Institute of Technology Kanpur, 2006-2013); M.Tech (Indian Institute of Information Technology & Management Gwalior, 2004-2006); B.E (Birla Institute of Technology, MESRA Ranchi, 1998-2002)
Current Address :

ECE Department NIT Kurukshetra City: Kurukshetra, PIN: 136119 State: Haryana ,India


Phone 1 (office) :
Phone 2 (office) :
Email : hellosudhanshubit@gmail.com, sudhanshu@nitkkr.ac.in

Area Of Intrest :

PhD aspirants are welcome to apply, but only in the areas of Microelectronics, Semiconductor Devices, Nanoelectronics and Nanotechnology.

Current Areas of Research

Molecular Electronics simulations using Density Functional Theory (DFT) in combination with Non Equilibrium Green's Function (NEGF), Carbon Nanotubes and other Nanostructures, CNTFETs, GrapheneFETs, Spintronics, SPINFETs, Magnetic Tunnel Junctions.

Simulation Platform: ATOMISTIX (ATK) software, Quantumwise Inc. (www.quantumwise.com) that was recently purchased by ECE department, NITKKR, through TEQIP-II project.

 

Other Areas of Research

Interconnects and Clock Distribution Networks, Microelectronics, VLSI and Semiconductor Devices, Circuits and Materials.

Google Scholar Citations

Researchgate Profile

 

Experience :

  • Assistant Professor at NIT Silchar (2012-13)
  • Assistant Professor at NIT Kurukshetra (2013 onwards)

 

Presiding Officer, Election Commission of India (2014)
Dy Incharge, Institiute Magazine (2013-2015)
Member, Innovation Club at NITKKR (2014 onwards)
Dy Center Suprintendant, Center-1, Institute End Semester Exam (December-2014)
Incharge Stock Verification, Chemistry and Mathematics department (2015)
Attended Innovation club meeting at Rashtrapati Bahavan (2015)
Member, Institute Library Commitee (2016)
Center Suprintendant (HOD nominated), Technician Recruitment Exam (March 2016)
Convener (Coordinator nominated), BOS DRC and other administrative issues, School ov VLSI Design and Embedded Systems.

Academic and Administrative duties performed at NITKKR:

  • Presiding Officer, Election Commission of India (2014)
  • Dy Incharge, Institiute Magazine (2013-2015)
  • Member, Innovation Club at NITKKR (2014 onwards)
  • Dy Center Suprintendant, Center-1, Institute End Semester Exam (December-2014)
  • Incharge Stock Verification, Chemistry and Mathematics department (2015)
  • Attended Innovation club meeting at Rashtrapati Bahavan (2015)
  • Member, Institute Library Commitee (2016)
  • Center Suprintendant (HOD nominated), Technician Recruitment Exam (March 2016)
  • Convener (Coordinator nominated), BOS DRC and other administrative issues, School of VLSI Design and Embedded Systems (2016).
  • Member BOS, ECE (2016)

Other :

Research Publications:

List of Publications

 

Book Chapter:

[1] Shreekant and Sudhanshu Choudhary, “Design and Simulation of CNTFET by Varying the Position of Vacancy Defect in Channel,” Intelligent Computing, Communication and Devices - Advances in Intelligent Systems and Computing (Springer), Vol. 308, pp 545-551, 2015.

 

[2] Sudhanshu Choudhary and S. Qureshi, “Impact of Defects and Doping on Electron Transport in SiCNTs,” Springer series on Silicon-based Nanomaterial (Springer), vol. 187, pp. 243-264, 2013.

 

 

International Journals (SCI indexed by Thomson Reuters ISI web of knowledge):

 

[1] Maneesha Singh and Sudhanshu Choudhary, “Spin Transport Investigations in Bilayer Graphene,” J Superconductivity and Novel Magnetism (Springer), vol. , no. , 2017. (accepted)

{SCI Impact Factor: 1.11}

[2] AK Singh, Sudhanshu Choudhary and S Smith, " Understanding the effect of twisting graphene sheet on its magneto resistance and spin filtration properties," J Superconductivity and Novel Magnetism (Springer), vol. , no. , 2017. (accepted)

{SCI Impact Factor: 1.11}

[3] Neeraj and Sudhanshu Choudhary, " Spin Transport in H2O Adsorbed SiCNT Based Magnetic Tunnel Junction Using Half Metallic Ferromagnetic Electrodes," J Nanoengineering and Nanomanufacturing, American Scientific Publishers, USA, vol. , no. , pp. , 2017.

[4] Garima Choudhary and Sudhanshu Choudhary, " First-Principles Study of Effects of Magnesium Oxide Adsorption in SiCNT-Based Magnetic Tunnel Junction," J Superconductivity and Novel Magnetism (Springer), vol. , no. , 2017. DOI: 10.1007/s10948-017-4041-5

{SCI Impact Factor: 1.11}

[5] G. Saini and S. Choudhary, "Improving the subthreshold performance of junctionless transistor using spacer engineering," Microelectronics Journal (Elsevier), vol. 59, pp. 55-58, 2017.

{SCI Impact Factor: 0.876}

[6] G. Saini and S. Choudhary, "Analog/RF performance of source-side only dual-k sidewall spacer trigate junctionless transistor with parametric variations," Superlattices and Microstructures (Elsevier), vol. 100, pp. 757-766, 2016.

{SCI Impact Factor: 2.117}

[7] G. Saini and S. Choudhary, "Improving the performance of SRAMs using asymmetric junctionless accumulation mode (JAM) FinFETs," Microelectronics Journal (Elsevier),vol. 58, pp. 1-8, 2016.

{SCI Impact Factor: 0.876}

[8] Sudhanshu Choudhary, C Dhopte and S Harode, "Understanding the Spin Transport in MgO-HfO2 Bilayer Insulating Barrier Magnetic Tunnel Junction," J Nanoelectronics and Optoelectronics, American Scientific Publishers, USA, vol. , no. , pp. , 2016.

{SCI Impact Factor: 0.9}

[9] A Raturi and Sudhanshu Choudhary, "Simulation study on understanding the Spin Transport in MgO adsorbed Graphene based Magnetic Tunnel Junction," SPIN (World Scientific Publishers), vol. 06, 1650011, 2016.

{SCI Impact Factor: 0.5}

[10] Alok K Singh and Sudhanshu Choudhary, "Understanding the Spin Transport in H2O-Adsorbed Graphene-Based Magnetic Tunnel Junction," J Superconductivity and Novel Magnetism (Springer), vol. , no. , 2016.

{SCI Impact Factor: 1.11}

[11] G. Saini and S. Choudhary, "Investigation of trigate JLT with dual-k sidewall spacers for enhanced analog/RF FOMs," Journal of Computational Electronics (Springer), vol. 15, pp. 865-873, 2016.

{SCI Impact Factor: 1.104}

[12] Sudhanshu Choudhary, Pradeep Mishra and Rohit goyal, "First-Principles Study of Spin Transport in BN Doped CrO2-Graphene-CrO2 Magnetic Tunnel Junction," Physics Letters A (Elsevier), vol. 380, no. 9-10, pp. 1098-1101, 2016.

{SCI Impact Factor: 1.626}

[13] Sudhanshu Choudhary and Abhishek Chauhan, "First principles study on transport characteristics of SiCNT-based field effect transistor," International Journal of Electronics (Taylor and Francis), pp. 1-9, 2016.

{SCI Impact Factor: 0.5}

[14] Sudhanshu Choudhary and Divya Kaushik, "Understanding the Effect of Vacancy Defects on Spin Transport in CrO2-Graphene-CrO2 Magnetic Tunnel Junction," Modern Physics Letters B, (World Scientific Publication), vol. , no., pp. , 2015. (Accepted)

{SCI Impact Factor: 0.75}

[15] Gaurav Saini and Sudhanshu Choudhary, "Asymmetric Dual-k Spacer Trigate FinFET for Enhanced Analog/RF Performance," J Comput Electron, vol. , no., pp. , 2015. (Accepted)

{SCI Impact Factor: 1.52}

[16] Sudhanshu Choudhary and Vikram Singh, "Understanding the Effect of n-type and p-type Doping in the Channel of Graphene Nanoribbon Transistor," Bulletin of Materials Science, vol. , no. , pp. , 2015. (Accepted)

{SCI Impact Factor: 1.017}

[17] Sudhanshu Choudhary and Rohit Goyal, “First-Principles Study of Spin Transport in CrO2-Graphene-CrO2Magnetic Tunnel Junction,” J Supercond Nov Magn, vol. 29, pp. 139-143, 2015.

{SCI Impact Factor: 1.11}

[18] Sudhanshu Choudhary and Devendra Upadhyay, "Understanding the Impact of Graphene Sheet Tailoring on the Conductance of GNRFETs," Bulletin of Materials Science, vol. 38, no. 7, pp. 1705-1709, 2015.

{SCI Impact Factor: 1.017}

[19] Sudhanshu Choudhary and Anurag Chauhan, “First-Principles Study of Spin Transport in CrO2-SiCNT-CrO2 Magnetic Tunnel Junction," J Comput Electron, vol. 14, no. 3, pp. 852-856, 2015.

{SCI Impact Factor: 1.52}

[20] Sudhanshu Choudhary and Mayur Varshney, “First-Principles Study of Spin Transport in CrO2-CNT-CrO2 Magnetic Tunnel Junction,” J Supercond Nov Magn, vol. 28, pp. 3141-3145 , 2015.

{SCI Impact Factor: 0.93}

[21] Sudhanshu Choudhary and Surendra Jalu, " First-principles study of spin transport in Fe–SiCNT–Fe magnetic tunnel junction," Physics Letters A (Elsevier), vol. 379, Issues 28–29, Pages 1661–1665, 2015.

{SCI Impact Factor: 1.626}

[22] Sudhanshu Choudhary, Gaurav Saini and S. Qureshi, " Impact of Radial Compression on the Conductance of Carbon Nanotube Field Effect Transistors,"Modern Physics Letters B, (World Scientific Publication),vol. 28, no.2, pp. 1-9,2014.

{SCI Impact Factor: 0.75}

[23] S. Choudhary and S. Qureshi, “Theoretical Study on the Effect of Dopant Positions and Dopant Density on Transport Properties of a BN Co-Doped SiC nanotube,” Physics Letters A (Elsevier), vol. 377, no. 5, pp. 430-435, 2013.

{SCI Impact Factor: 1.73}

[24] S. Choudhary and S. Qureshi, “Effect of Moisture on Electron Transport in Si-C Nanotubes: an ab-initio study,” Physics Letters A (Elsevier), vol. 376, no. 45, pp. 3359-3362, 2012.

{SCI Impact Factor: 1.73}

[25] S. Choudhary and S. Qureshi, “Theoretical Study on Transport Properties of a BN Doped SiC nanotube,” Physics Letters A (Elsevier), vol. 375, no. 38, pp. 3382-3385,2011.

{SCI Impact Factor: 2.016}

[26] Sudhanshu Choudhary and S. Qureshi, “Inductance Modelling of SWCNT Bundle Interconnects using Partial Element Equivalent Circuit Method,” Journal of Computational Electronics (Springer), vol. 10, no.1-2, pp. 241-247, 2011.

{SCI Impact Factor: 1.211}

[27] S. Choudhary and S. Qureshi, “Theoretical Study on The Effect of Radial and Axial Deformation on Electron transport Properties in a Semiconducting Si-C Nanotube,”Bulletin of Material Science, (Springer), vol. 35, no.5, 2012.

{SCI Impact Factor: 0.944}

[28] Sudhanshu Choudhary and S. Qureshi, "Theoretical Study on the Effect of Vacancy Defect Reconstruction on Electron Transport in Si-C Nanotubes," Modern Physics Letters B, (World Scientific Publication),vol. 25 no. 28, pp. 1-12, 2011.

{SCI Impact Factor: 0.512}

[29] Sudhanshu Choudhary and S. Qureshi, “Power Aware Channel Width Tapering of Serially Connected MOSFETs", Analog Integrated Circuits and Signal Processing (Springer), vol. 70, no. 3, pp. 370 - 383, 2012.

{SCI Impact Factor: 0.452}

[30] Sudhanshu Choudhary and S. Qureshi, “Performance Evaluation for Mesh-based NoCs: Implementation of a New Architecture and Routing Algorithm,” International Journal of Automation and Computing (Springer),vol. 9, no. 3,2012.

{SCI listed journal}

 

Other International Journals (indexed in SCOPUS)

 

[31] Sudhanshu Choudhary and S. Qureshi, "Vacancy Defect Reconstruction and its Effect on Electron Transport in Si-C Nanotubes," Journal of Nano & Electronic Physics, vol. 3, no.1, pp. 1035-1040, 2011.

[32] Sudhanshu Choudhary and S. Qureshi, "Effect of Radial and Axial Deformation on Electron transport Properties in a Semiconducting Si-C Nanotube," Journal of Nano & Electronic Physics, vol. 3, no.1, part 3, pp. 584-589, 2011.

[33] Sudhanshu Choudhary and S. Qureshi, "Design. Modelling and Simulation of H-tree Clock Distribution Networks", Australian Journal of Electrical and Electronics Engineering (Taylor & Francis), vol. 7, no. 3, 2010.

[34] Sudhanshu Choudhary and S. Qureshi, "Power Aware Channel Width Tapering of Serially Connected MOSFETs", Australian Journal of Electrical and Electronics Engineering (Taylor & Francis), vol. 5 no. 1, 2008.

 

International Conferences:

 

[35] Sudhanshu Choudhary and S. Qureshi, "Moisture Assisted Electron Transport in Si-C Nanotubes: an ab-initio study," Nanotech-2012, 18-21 June, 2012, Santa Clara CA, USA.

[36] Sudhanshu Choudhary and S. Qureshi, "A New NoC Architecture Based on Partial Interconnection of Mesh Networks," 2011, IEEE Symposium on Computer and Informatics (IEEE-ISCI 2011), 20-23 March, 2011, Kualalumpur, Malaysia, pp. 334-339.

[37] Sudhanshu Choudhary and S. Qureshi, "Life Time Issues in Organic Light Emitting Diodes", IEEE Conf. Proc. TENCON 2008, pp. 1-4. (Print ISBN: 978-1-4244-2408-5).

[38] Sudhanshu Choudhary and S. Qureshi, "Power Aware Channel Width Tapering of Serially Connected MOSFETs", IEEE International Conference on Microelectronics (ICM'07), 2007, Cairo, Egypt, pp. 412-415.

 

NOTE: Journal impact factor is as available on the date of article publication.

 

 

Awards: 2017 Albert Nelson Marquis Lifetime Achievement Award

Professional:

  • I am a Reviewer of the following SCI journals:

1) IEEE Transaction on Electron Devices (IEEE)
2) IEEE Transaction on Nanotechnology (IEEE)
3) IET Computers and Digital Techniques
4) Physica E (Elsevier)
5) Computational Material Science (Elsevier)
6) COMPEL (Emerald publishing)
7) Journal of Cluster Science (Springer)
8) Circuits Systems and Signal Processing (Springer)
9) International Journal of Electronics (Taylor & Francis)
10) International Journal of Automation and Computing (Springer)
11) Journal of Computational Electronics (Springer)
12) Defence Science Journal (Ministry of Defence, India)
13) Journal of Applied Physics (AIP)

14) Journal ofElectronic Materials (Springer)

 

  • I am a reviewer of SERB-DST project proposals.
  • I have refereed more than 20 International conferences, most recent :

IEEE-ICCAIE 2011, ICOS 2011, IEEE-ISCI 2011, ISIEA 2011, IAPEC 2012, APACE 2012, BEIAC 2012, ICEDSA 2012, PECON 2012, IEEE-SCOReD 2012, ISCAIE 2012, IEEE-ISCI 2012,  ISIEA 2012, ISWTA 2012, ICWiSe2013, CEAT 2013, RFM 2013, IEEE-ISCI 2013, ISIEA 2013, ISWTA 2013, ICOCOE 2014, ISTMET 2014, ICED 2014, ICNC 2014)

  • My EDAS identifier no. is 300306
  • 2017 Albert Nelson Marquis Lifetime Achievement Award 
  • Listed in Marquis Who's Who in the World
  • Cash Award (Rs 20,000/-) twice by IIT Kanpur for publsihing in reputed journals
  • MHRD GATE scholarship during M.Tech
  • MHRD scholarship during PhD
  • Full attendance award for not being absent through out the year at school level.

Ph.D Supervised:

3 students (mentioned below) are currently doing PhD under my supervision:

  1. Gaurav Saini (Asst. Prof., ECE department, NIT Kurukshetra)
  2. Karan Sharma (Asstt. Prof., ECE department, NIT Kurukshetra)
  3. Shweta Meena (Asstt. Prof., ECE department, NIT Kurukshetra)

 

Contribution:

Details of work done so far and significance of the scientific contribution:

The major contributions so far are:
 
1) Study on the effect of deformation in SiCNTs (S. Choudhary et. al., 2011, at IIT Kanpur)
 
The results of the study on the effects of radial and axial deformation suggest significant reduction in threshold voltage in case of both radially compressed and axially elongated (8,0) SiCNTs. A large difference in current-voltage characteristics was also observed. High current conduction in deformed tube is associated with the introduction of new electronic states near the Fermi level, which is also attributed by the reduction in bandgap. At high bias voltages these electronic states are brought over the Fermi level which facilitates tunneling that result in increase in current in deformed semiconducting SiCNT structures.  Analysis of frontier molecular orbitals (FMO) and transmission spectrum show bandgap reduction in deformed nanotubes. The FMOs and the orbitals corresponding to peaks in T(E) around Fermi level are suggested to have some major contributions from the deformed site.
 
2) Study on the effect of vacancy defects and their reconstruction in SiCNTs (S. Choudhary et. al., 2011, at IIT Kanpur)
 
The results of the study on the effect of vacancy defects and their reconstruction show that single vacancies and di-vacancies in SiCNTs have different reconstructions. A single vacancy when optimized, reconstructs into a 5-1DB configuration in both zigzag and armchair SiCNTs, and a di-vacancy reconstructs into a 5-8-5 configuration in zigzag and into a 5-2DB configuration in armchair SiCNTs. Analysis of frontier molecular orbitals (FMO) and transmission spectrum show that the introduction of vacancy reduces the bandgap of (5,5) semiconducting SiCNTs and increases the bandgap of (4, 0) conducting SiCNTs (converts them to semi-metallic nanotubes).  Bias voltage dependent current characteristic show reduction in overall current in metallic SiCNT and an increase in overall current in semiconducting SiCNT which is due to introduction of new electronic states around the Fermi level followed by conduction through the defect sites.
 
3) Study on the effect of Boron (B) and Nitrogen (N) co-doping in SiCNTs (S. Choudhary et. al., 2011 and 2013, at IIT Kanpur)
 
The results of the study on the effect of BN co-doping in SiCNTs suggests that co-doping BN impurities suppresses the important negative differential resistance (NDR) property. NDR suppression is attributed to the introduction of new electronic states near the Fermi level followed by weak orbital localization. BN co-doping results in exponential current-voltage (I-V) characteristics which is in contrast to linear I-V characteristics for individual boron and nitrogen doped SiCNTs. HOMO has no contribution from B impurity, whereas, LUMO has contribution from N impurity at low and high bias. The variation in dopant (BN) positions results in a small increase in conductance when both BN impurities are far in space from each other and close to the electrodes. More orbitals contribute to the current when this spacing is increased.
 
4) Study on moisture adsorption in SiCNTs (S. Choudhary et. al., 2012, at IIT Kanpur)
 
Results obtained by relaxing an H2O molecule (water) over a (8,0) SiCNT show that water molecule binds with SiCNT. The formation of Si-O bond (bond length ~ 1.95 Å) between the SiCNT and H2O molecule was discovered. However, previous studies on H2O adsorption in carbon nanotubes (CNTs) have shown the formation of C-H bond at the CNT surface. A different position and orientation of the H2O molecule over SiCNT was also tried, however, the nearest silicon (Si) atom was still found as the favorable position resulting in Si-O bond formation. Bias voltage dependent current characteristic and transmission spectrum characteristic show an increase in current with applied bias resulting from the delocalized orbitals. A comparative study on the defect free SiCNT and when bringing more than one H2O molecule near the SiCNT surface was also performed to comment on the effect of moisture (water) adsorption on the overall conductivity of the SiCNT. It was found that on increasing the number of H2O molecules, the SiCNT conductivity reduces.
 
5) Study on Carbon Nanotube Field Effect Transistor ((S. Choudhary et. al., 2014, at NIT Kurukshetra)


The electronic behavior of semiconducting carbon nanotubes based CNTFET under the influence of radial deformation defect present in the channel was theoretically investigated using non-equilibrium Green’s function method self-consistently coupled with three-dimensional electrostatics. It was found that deformation in the CNTFET channel composed of a small diameter semiconducting carbon nanotube can increase its conductance by a factor of 4 or more depending upon the average reduction in the C-C bond length after compression. This increase in CNTFET conductance is directly related to the movement of the electro

 

Others:

The subjects for which I am Course Instructor

ODD Semester-2014:

1) SVE-500T (Mixed Signal IC Design for M.Tech VLSI and Embedded Systems):

1.1 ASSIGNMENT No.1-  Due date is February 24, 2014

1.2 ASSIGNMENT No. 2 :  Due date is March 16, 2014

1.3 ASSIGNMENT No. 3: Due date is April 13, 2014

2) SVE-512T Real Time Systems:

2.1 Lecture Slides (Reference Material)

*can also be downloaded directly from CUT University of Gothenburg

3) Course code: SVE 501 T (Digital IC Design)

3.1 Lecture Slides:

Lecture 1-4:  Download Slides 

Lecture 5-6:  Download Slides 

Lecture 7-12:  Download Slides 

Lecture 13-16:  Download Slides 

Lecture 17-22:  Download Slides 

Lecture 23-28:  Download Slides 

Lecture 29-31:  Download Slides 

Lecture 32-33:  Download Slides 

Lecture 34-35:  Download Slides 

Lecture on Chapter-9:  Download Slides 

3.2 Assignments:

Assignment:1

Assignment:2

Assignment:3

Assignment:4

Assignment:5

Assignment:6

Assignment:7

Download SPICE software (AIMSPICE)

Download ORCAD P-SPICE

SPICE Tutorial

SPICE-MOSFET MODELS (LEVEL1-49 and BSIM models)

4. Embedded System Software Development (SVE-531T)

Download lecture slides on:

Operating Systems  Compiler Design   RunTimeEnvironment

For students doing PhD/M.Tech Thesis [Girdhar]:

  •  Always meet and report your work to your supervisor. At least once a week.
  • Give the progress and what you want to do in writing. What you say and what I hear may be completely different.
  • Set a goal and reason why you want to complete your Ph.D/M.Tech. That will drive and motivate you to finish your study.
  • Publish your work in reputable journals with impact factors. That's like an insurance policy during the VIVA.

Few abbreviations:

--If you fail , never give up because F.A.I.L.   means “ First Attempt In Learning

--End is not the end but E.N.D. means "Effort Never Dies

--If you get No as an answer , remember N.O. means “ Next Opportunity” 

"It is the education which is the right weapon to cut the social slavery and it is the education which will enlighten the downtrodden masses to come up and gain social status, economics betterment and political freedom" ----- Bharat Ratna Dr BR Ambedkar