Kolla Lakshmi Ganapathi

Designation:    Assistant Professor
Department:    Physics
Qualification:     Ph. D. (IISc Bangalore)
Address:    
Email:    klganapathi@nitkkr.ac.in
Phone No:    9916955967
Area of Interest:    

Nanoscale Quantum Devices for Emerging Technologies including in-memory computing and Quantum Technologies (Device physics & Engineering, Nanofabrication &Characterization); 2D Material based Ferroelectric field effect and Nueromorphic devices for High Speed and Energy Efficient Electronics; Diamondtronics; Translational Research.

Affiliations:
1. Centre of Excellence in Quantum Centers in Diamond and Emergent Materials ( QuCenDiEM), IIT Madras.
 2. Centre for 2D Materials Research and Innovation (2DMRI), IIT Madras.

*Note: Ph. D. positions are available for a highly motivated UGC-CSIR NET, JRF or GATE qualified candidates.

Summary of Accomplishments:

Patents : 7 ( 1-US, 1-International, 5- Indian)
Journal Publications: 38
Peer Reviewed Conference Proceedings: 8
Sponsored and Consultancy Projects: 11 ( 2: PI, 9: Co-PI),  Total Grant: INR.1360 lacs.
Technologies developed/Transferred:
Research Guidance: Ph.D ( 3 ongoing students as a Co-guide), Masters- M.Tech / M.Sc ( 4 students completed)

Experience:

Assistant Professor: Department of Physics, NIT Kurukshetra, Kurukshetra ( November 21,  2022- Present).
DST INSPIRE Faculty: Department of Physics, IIT Madras, Chennai ( June 5, 2017- November 18,  2022).
Research Associate: Centre for Nanoscience and Engineering (CeNSE), IISc Bangalore (August 1, 2014- June 4, 2017).

Courses Taught:

At NIT KKR: 

Theory courses:

  1. Physics-I (PHIC11) [November 2022- March 2023).
  2. MEMS & NEMS [Jan- May 2023)].
  3. Energy Materials and Devices (OE-EMD) [Jan- May 2023)].

 

Laboratory courses:

  1. B. Tech- I Year lab.

 

At IIT Madras:

All the teachers and courses at IIT Madras are evaluated by the students who attend the course, referred to as the Teacher Course Feedback (TCF). I received average TCF of 0.87 out of 1.

  1. Physics-II (PH1020)   [Jan – May 2022]
  2. Electronics (PH3040) [July – Nov 2022]
  3. Nanomaterials and Nanotechnology (PH6011) [ Jan – May 2021]
  4. Foundations in Experimental Physics (PH7090) [ July- Nov 2020]
  5. Physics and Technology of Thin films (PH5670) [ July- Nov 2020]
  6. Nanomaterials and Nanotechnology (PH6011) [ Jan – May 2020]
  7. Physics and Technology of Thin films (PH5670) [ July- Nov 2019]
  8. Nanomaterials and Nanotechnology (PH6011) [ Jan – May 2019]
  9. Physics and Technology of Thin films (PH5670) [ July- Nov 2018]
  10. Semiconductor Physics and Devices  (PH6012)  [ Jan – May 2018]

Professional Recognition/Awards/Prize/Certificate/Fellowship Received:

  • Guest editorial board member in ‘Frontiers in Materials’ under Quantum Materials section (Quantum and Advanced materials theme).
  • Winning team member of DARE to DREAM 2.0 innovation contest (October 4, 2021). Our proposal entitled “ Diamond based MEMS acoustic vector sensor“ under the problem domain of “Underwater MEMS Acoustic Vector Sensor“ has been selected as Winner for “Dare to Dream 2.0” innovation contest by DRDO.
  • Session chair in Oxide electronics, and Diamond and other related materials themes at 3rd Indian Materials Conclave and 32nd Annual General Meeting of MRSI (December 20-23, 2021).
    INSPIRE Faculty Award, Department of Science and Technology, India, March 2017
  • Nominated to 2016 ICYRAM award, Materials Research Institute, Northwestern University, USA (2016).
  • Selected member of the Global Materials Network (GMN) [www.globalmaterialsnetwork.org].
  • Scholarship from Ministry of Human Resource Development, Government of India (Aug 2008 – Jul 2013).
  • Reviewer for Nanoscale, IEEE Transactions on Industrial Electronics, IEEE Transactions on Electron Devices, Journal of Applied Physics, Journal of Physics D: Applied, Semiconductor Science and Technology, Nanotechnology (IOP), Journal of Materials Chemistry C (RSC), Applied Electronic Materials (ACS)

 

Conferences/Workshops Organized:

  • Short term course on 2D materials- Physics and Applications (Sept 21-26, 2019), IIT-Madras (Coordinator). ( AICTE sponsored)
  • International Conference on Laser Deposition (iCOLD-2019), Alva’s Institute of Engineering and Technology, Moodbidri, India, Nov 27-29, 2019 (Member)
  • International Conference on Laser Deposition (iCOLD-2017), IIT-Madras, India, Nov 21-23, 2017 (Organizing committee member).

Invited talks:

  1. SERB-DST Sponsored workshop on “Emerging Electronics for Logic and Memory devices: Towards Next-generation Computing System”, NIT Silchar, September 10-11, 2022.
  2. AICTE Sponsored QIP Short Term Course on “Sensors Technology”, IIITDM Kancheepuram, Chennai, March 14-19, 2022.
  3. Faculty development program (FDP) on the “Recent trend in Nano-Electronics and VLSI: The materials based device Technology”, NIT AP, March 15-19, 2022.
  4. 3rd Indian Materials Conclave and 32nd Annual General Meeting of MRSI (Dec 20-23, 2021).
  5. International Conference on Laser Deposition (iCOLD-2019), India, Oct-2019
  6. Sakura Science program, SIT, Tokyo, Japan (December-2018).
  7. IEEE sponsored lecture (IEEE North Jersey MTT/AP Chapter) NJIT, USA, April-2018
  8. ISRO and DRDO Scientist training workshops at CeNSE, IISc, Bangalore (2017-2019)
  9. Faculty Development programme, Sathyabhama University, Chennai, India, Oct-2018
  10. Faculty Development programme Ramaiah College, Bangalore, India, June-2016
  11. International Conference on Laser Deposition (iCOLD-2017), India, Oct-2017
  12. 1st National Conference on Micro and Nano Fabrication, CMTI-India, Jan-2013
Others:   

List of Publications:

Patents: 7

  1. Bhattacharjee, K. L. Ganapathi, S. Mohan and N. Bhat, “Programmable Tunnel Thermionic Mode Transistor”. Granted U.S. Patent 10411695B2, Sept 10, 2019.
  2. Bhattacharjee, K. L. Ganapathi, S. Mohan and N. Bhat, “Asymmetric dual gate programmable thermionic tunnel field effect transistor”, Indian Patent Application No. 201741018661, May 26, 2017.
  3. Anju Saroha, T.Dixit, L. Ganapathi and M. S. R. Rao, “A process for generating broadband white light from polycrystalline yttrium iron garnet and a product thereof “, PCT Publication No: WO/2022/185332, Publication Date: 09/09/2022.
  4. Anju Saroha, T.Dixit, L. Ganapathi and M. S. R. Rao, “A process for generating broadband white light from polycrystalline yttrium iron garnet and a product thereof “, Indian Application No. 202141008825, March 2, 2021..
  5. Yadav, T. Sakorikar, K. L. Ganapathi, S. Ramaparbhu and M. Jaiswal, “Patterned epoxy-binder encapsulated graphene-oxide membranes for scalable water filtration”, Indian Patent Application No.202131022460, May 19, 2021 (Filed with TATA STEEL).
  6. Ramshanker, K. L. Ganapathi, S. Mohan, M.S. Bhat, “System and method for designing micro-heater achieving temperature uniformity” Indian Patent Application No.202241072549, December 15, 2022.
  7. Ramshanker, K. L. Ganapathi, S. Mohan, S. Tiwari, A.K. Jujusaria, J. Singh “Hydrogen sensitive material, Hydrogen gas sensor device, Methods of preparing and Application Thereoff” Indian Patent Application No.202341001501, January 07, 2023 (Filed with SCL Chandigarh).

Peer reviewed Journals — Total: 38

Cover pages: 2 in IEEE Electron Device Letters

Editor Pick’s: 2 (Physical Review B and Applied Physics Letters)

  1. Francis, R. Sebastian, T. Dixit, K. L. Ganapathi, M.S.R. Rao, “High responsivity n-ZnO nanorods/p-GaN heterojunction-based UV-A photodetectors”, Semiconductor Science and Technology, 38, 015011 (2023); https://doi.org/10.1088/1361-6641/aca3c8; ISSN: 1361-6641; Impact factor: 2.36; Citation:0
  2. Sumanth, K. L. Ganapathi, M.S.R. Rao, T. Dixit, “A Review on Realizing the Modern Optoelectronic Applications through Persistent Photoconductivity”, Journal of Physics D: Applied Physics, 55, 393001 (2022); https://doi.org/10.1088/1361-6463/ac7f66; ISSN: 1361-6463; Impact factor: 3.41; Citation:0
  3. Arora, K. L. Ganapathi, T. Dixit, M. Muralidhar, M. Murakami, M. S. R. Rao, A. Krishnan Thickness-dependent nonlinear electrical conductivity of few-layer muscovite mica”, Physical Review Applied, 17 (6), 064042 (2022); https://doi.org/10.1103/PhysRevApplied.17.064042; ISSN: 2331-7019; Impact factor: 4.93; Citation:0
  4. Das, R. Raj, J. Jana, S. Chatterjee, K. L. Ganapathi, M. Chandran, M. S. R. Rao, “Diamond – The Ultimate Material for Exploring Physics of Spin-defects for Quantum Technologies and Diamontronics”, Journal of Physics D: Applied Physics, 55, 333002 (2022). https://doi.org/10.1088/1361-6463/ac6d89; ISSN: 1361-6463; Impact factor: 3.41; Citation:0
  5. Devendar, M. R. Shijeesh, T. Sakorikar, K. L. Ganapathi*, and M. Jaiswal*, “Intercalated water mediated electromechanical response of graphene oxide films on flexible substrates”, Journal of Physics: Condensed Matter, 34(2), 025001 (2022). (*Corresponding author). https://doi.org/10.1088/1361-648X/ac2ad0; ISSN: 1361-648X; Impact factor: 2.8; Citation: 0
  6. MA Jithin, L. Ganapathi, M Ambresh, Pavan Nukala, NK Udayashankar, S Mohan, “Development of titanium nitride thin film microheaters using laser micromachining”, Vacuum, 197, 110795 (2022). https://doi.org/10.1016/j.vacuum.2021.11079. ISSN: 0042-207X; Impact factor: 4.1; Citation: 0.
  7. L. Ganapathi*, N. Bhat and S. Mohan, “Optimization and integration of ultrathin e-beam grown HfO2 gate dielectrics in MoS2 transistors” Journal of Physics D: Applied Physics, 54 (44), 445302 (2021); (*Corresponding author) https://doi.org/10.1088/1361-6463/ac19e0; ISSN: 1361-6463; Impact factor: 3.41; Citation: 1
  8. Sooraj*, K. L. Ganapathi*, V. Eswaraiah, N.Bhat, “Performance Tunability of Field-Effect Transistors using MoS2(1-x) Se2x Alloys”, Nanotechnology, 32(43), 435202 (2021) (* Equal Contribution). https://doi.org/10.1088/1361-6528/ac1717; ISSN: 1361-6528; Impact factor: 3.95; Citation: 0
  9. Ramashanker, K. L. Ganapathi, N. Varun, M. S. Bhat, S. Mohan, “Development of CeO2-HfO2 mixed oxide thin films for high performance oxygen sensors”, IEEE Sensors Journal, 21(16), 18326-18333 (2021). https://doi.org/10.1109/JSEN.2021.3085857; ISSN: 1530-437X; Impact factor: 4.3; Citation: 0
  10. Dixit, J. Agrawal, K. L. Ganapathi, M. S. R. Rao, V. Singh, “Ultra-Wide Bandgap CuO: High-Performance Solar-Blind Photo-detection”, IEEE Electron Device Letters, 41 (12), 1790-1793(2020). https://doi.org/10.1109/LED.2020.3030641; ISSN: 1558-0563; Impact factor: 4.82; Citation:2 (Cover page)
  11. Dixit, J. Agrawal, K. L. Ganapathi, M. S. R. Rao, V. Singh, “Long lasting persistent photoconductivity in Au/CuO thin films for optical memory”, IEEE Photonics Technology letters, 32(6), 329-332 (2020). https://doi.org/10.1109/LPT.2020.2973725; ISSN: 1941-0174; Impact factor: 2.86; Citation: 1
  12. Arora, P.K. Nayak, T. Dixit, K. L. Ganapathi, A. Krishnan, M.S. R. Rao, “Stacking angle dependent multiple excitonic resonances in bilayer Wse2”, Nanophotonics, 9(12), 3881–3887 (2020). https://doi.org/10.1515/nanoph-2020-0034; ISSN: 2192-8614; Impact factor: 8.5; Citation: 0
  13. Saroha, T. Dixit, K. L. Ganapathi, M. Muralidhar, M. Murakami, M. S. R. Rao, Nanoscale Probing of Magnetic and Electrical Properties of YIG/Si(100) Thin Films Grown by Pulsed Laser Deposition”, IEEE Magnetic Letters., 11, 7102305 (2020). https://doi.org/10.1109/LMAG.2020.2985338; ISSN: 1949-3088; Impact factor: 1.52; Citation:0
  14. L. Ganapathi, Martando Rath, MS Ramachandra Rao, “Polarization induced switching in PZT back gated multilayer MoS2 FETs for low power non-volatile memory”, Semiconductor Science and Technology, 34 (5), 055016 (2019). https://doi.org/10.1088/1361-6641/aaf9e6; ISSN: 1361-6641; Impact factor: 2.36; Citation:5
  15. Sarkar, A.bid, K. L. Ganapathi and S. Mohan, “Probing defect states in few-layer MoS2 by conductance fluctuation spectroscopy”, Physical Review B, 99 (24), 245419 (2019)—Editor’s suggestion, https://doi.org/10.1103/PhysRevB.99.245419; ISSN: 2469-9969; Impact factor: 3.91; Citation:4
  16. Dixit, A. Arora, M. Muralidhar M. Murakami, Pramoda K. Nayak, K. L. Ganapathi, M.S. Ramachandra Rao, “Plasmon Assisted Selective Enhancement of Direct Band Transitions in Multi-layer MoS2, IEEE Photonics Journal, 11(5), 4501106 (2019). https://doi.org/10.1109/JPHOT.2019.2935000; ISSN: 1943-0655; Impact factor: 2.25; Citation:2
  17. Dixit, J. Agrawal, M. Muralidhar, M. Murakami, K. L. Ganapathi, V. Singh, M. S. R. Rao, “Exciton Lasing in ZnO-ZnCr2O4Nanowalls”, IEEE Photonics Journal, 11(6), 4501307(2019). https://doi.org/10.1109/JPHOT.2019.2945010; ISSN: 1943-0655; Impact factor: 2.25; Citation:1
  18. Ramashanker, K. L. Ganapathi, M. S. Bhat, S. Mohan, “RF sputtered CeO2 thin films based oxygen sensors”, IEEE Sensors Journal, 11 (22), 10821-10828 (2019). https://doi.org/10.1109/JSEN.2019.2931766; ISSN: 1530-437X; Impact factor: 4.3; Citation:3
  19. Arora, T. Dixit, K.V.A. Kumar, S. Krishnan, K.L. Ganapathi, A. Krishnan, P.K. Nayak, M.S.R. Rao, “Plasmon induced brightening of dark exciton in monolayer WSe2 for quantum optoelectronics”, Applied Physics Letters, 114 (20), 201101 (2019). https://doi.org/10.1063/1.5093664; ISSN: 1077-3118; Impact factor: 3.97; Citation:4
  20. Dixit, J. Agrawal, K. L. Ganapathi, V. Singh, M. S. R. Rao, “High-Performance Broadband Photo-detection in Solution-Processed ZnO-ZnCr2O4 Nanowalls”, IEEE Electron Device Letters, 40 (7), 1143-1146 (2019). https://doi.org/10.1109/LED.2019.2916628; ISSN: 1558-0563; Impact factor: 4.82; Citation:4
  1. Dixit, J. Agrawal, S. V. Solanke, K. L. Ganapathi, M. S. R. Rao and V. Singh, “ZnO/Au/ZnO Configuration for High Performance Multi-band UV Photo-detection”,  IEEE Sensors Letters, 3 (9), 3501604 (2019). https://doi.org/10.1109/LSENS.2019.2940764; ISSN: 2475-1472; Impact factor: 2.8; Citation:1
  1. Bhattacharjee, R.Vatsyayan, K. L. Ganapathi, P. Ravindra, S. Mohan, N. Bhat, “Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2”, Advanced Electronic Materials, 5(6), 1800863, (2019). https://doi.org/10.1002/aelm.201800863; ISSN: 2199-160X; Impact factor: 7.65; Citation:2
  1. Bhattacharjee, K. L. Ganapathi, D. G. Sharma, A. Sharma, S. Mohan, N. Bhat, Adaptive Transport in High Performance (Ion), Steep Sub-Threshold Slope (SS < 60 mV/dec) MoS2Transistors”, IEEE Transactions on Nanotechnology, 18, 1071-1078 (2019). https://doi.org/10.1109/TNANO.2019.2946449;ISSN: 1536-125X; Impact factor: 2.97; Citation:1
  2. R. Y. Gangavarapu, Anjanashree M.R.S, K.L. Ganapathi, S. Mohan, AK Naik, “Dielectric based charge carrier tuning for CNT CMOS inverters”, Semiconductor Science Technology, 34 (1), 015015 (2018). https://doi.org/10.1088/1361-6641/aaf17d; ISSN: 1361-6641;  Impact factor: 2.36; Citation:1
  3. Dixit, A. Arora, A. Krishnan, *K. L. Ganapathi, P.K. Nayak, MSR. Rao, “Near Infrared Random Lasing in Multilayer MoS2”, ACS Omega., 3 (10), 14097-14102 (2018) (*Corresponding author). https://doi.org/10.1021/acsomega.8b01287; ISSN: 2470-1343; Impact factor: 4.13; Citation:7
  4. Dixit, J. Agrawal, K. L. Ganapathi, V. Singh, M. S. R. Rao,” Solution-Processed Transparent CuO Thin Films for Solar-Blind Photodetection”, IEEE Electron Device Letters, 40(2), 255-258 (2018). (Cover page). https://doi.org/10.1109/LED.2018.2886928; ISSN: 1558-0563; Impact factor: 4.82; Citation:12
  1. L. Ganapathi, Y. Ding, D. Misra, N. Bhat, “Interface states reduction in atomic layer deposited TiN/ZrO2/Al­2O3/Ge gate stacks”, Journal of Vacuum Science and Technology-B, 36 (2), 021201 (2018). https://doi.org/10.1116/1.5006789; ISSN: 2166-2754; Impact factor: 1.57; Citation:2
  2. MA Jithin, L. Ganapathi, GNVR Vikram, N.K. Udayashankar, S Mohan, “Pulsed DC magnetron sputtered titanium nitride thin films for localized heating applications in MEMS devices”, Sensors and Actuators-A: Physical, 272, 199-205 (2018). https://doi.org/10.1016/j.sna.2017.12.066; ISSN: 0924-4247; Impact factor: 4.3; Citation:15
  3. Chandrasekar, S. Kumar, K. L. Ganapathi, S. Prabhu, S.B. Dolmanan, S. Tripathy, S. Raghavan, KN Bhat, S. Mohan, R. Muralidharan, N. Bhat, Digbijoy N Nath, “Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates”, IEEE Transactions on Electron Devices, 65 (9), 3711-3718 (2018). https://doi.org/10.1109/TED.2018.2856773; ISSN:1557-9646; Impact factor: 3.22; Citation:6
  4. Bhattacharjee, K. L. Ganapathi, S. Mohan and N. Bhat, “A sub-thermionic MoS2 FET with tunable transport,” Applied Physics Letters, 111(16), 163501 (2017) (Editor’s pick). https://doi.org/10.1063/1.4996953; ISSN: 1077-3118; Impact factor: 3.97; Citation:24
  5. Bhattacharjee, K. L. Ganapathi, H. Chandrasekar, T. Paul, S. Mohan, A. Ghosh, S. Raghavan, N. Bhat, “Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs”, Advance Electronic Materials, 3 (1), 1600358, (2017). https://doi.org/10.1002/aelm.201600358; ISSN: 2199-160X; Impact factor:7.65; Citation:19
  6. Suresh, K. L. Ganapathi and S. Uthanna, “Electrical, optical, structural and chemical properties of Al2TiO5 films for high- gate dielectric applications,” Materials Science in Semiconductor Processing, 57, 137-146 (2017). https://doi.org/10.1016/j.mssp.2016.10.019; ISSN: 1369-8001; Impact factor: 4.65; Citation: 4
  1. L. Ganapathi, S. Bhattacharjee, S. Mohan and N. Bhat, “High-performance HfO2 back gated multilayer MoS2 transistors”, IEEE Electron Device Letters, 37 (6), 797-800 (2016). https://doi.org/10.1109/LED.2016.2553059; ISSN: 1558-0563; Impact factor:4.82; Citation:64
  2. Bhattacharjee, *K. L. Ganapathi, D. N. Nath and N. Bhat, “Surface States Engineering of metal/MoS2 contacts using Sulfur Treatment for Reduced Contact Resistance and Variability“, IEEE Transactions on Electron Devices, 63(6), 2556-2562 (2016). (* Authors equally contributed). https://doi.org/10.1109/TED.2016.2554149; ISSN:1557-9646;  Impact factor:3.22; Citation:53
  3. Bhattacharjee, K. L. Ganapathi, D. N. Nath and N. Bhat, “Intrinsic limit for Contact Resistance in exfoliated multilayered MoS2 FET“, IEEE Electron Device Letters, 37, 119122 (2015). https://doi.org/10.1109/LED.2015.2501323; ISSN: 1558-0563; Impact factor:4.82; Citation:19
  4. Chandrasekhar, K. L. Ganapathi, S. Bhattacharjee, N. Bhat and D.N. Nath, “Optical Phonon limited high field transport in layered materialsIEEE Transactions on  Electron Devices, 63 (2), 767-772 (2015). https://doi.org/10.1109/TED.2015.2508036; ISSN:1557-9646; Impact factor:3.22; Citation:4
  5. L. Ganapathi, N. Bhat, and S. Mohan, “Influence of O2 flow rate on HfO2 gate dielectrics for back gated graphene transistors“, Semiconductor Science and Technology, 29, 055007 (2014). https://doi.org/10.1088/0268-1242/29/5/055007; ISSN: 1361-6641; Impact factor:2.36; Citation:12
  6. L. Ganapathi, N. Bhat, and S. Mohan, “Optimization of HfO2 films for high transconductance back gated graphene transistors”, Applied Physics Letters, 103, 073105 (2013). https://doi.org/10.1063/1.4818467; ISSN: 1077-3118; Impact factor:3.97; Citation:26
  • Peer reviewed conference proceedings: 8

  1. Jithin M A, K L Ganapathi, N K Udayashankar and S Mohan, “Novel fabrication technique for NiTi and TiN microstructures by femto second lasers”, IOP Conf. Series: Materials Science and Engineering, 872, 012113 (2020). https://doi.org/10.1088/1757-899X/872/1/012113;ISSN: 1757-899X;
  1. Bhattacharjee, K. L. Ganapathi, S. Mohan and N. Bhat, “Interface Engineering of Highk Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs“, ECS Transactions 80 (1), 101-107 (2017). https://doi.org/10.1149/08001.0101ecst; ISSN: 1938-6737; Citation:4 (Invited)
  2. Suresh, K. L. Ganapathi and S. Uthanna, “Annealing temperature influenced physical properties of Al2TiO5 thin films for MIS devices”, Advanced Materials Proceedings, 2(3), 189-193 (2017). DOI: 10.5185/amp.2017/3011; ISSN: 2000-441X.
  3. Misra, Y. M. Ding, S. Mukhopadhyay, K. L. Ganapathi and N. Bhat, Reduction of interface states in Ge/High-k gate stacks and its reliability implications”, Proceedings of the 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp. 499- 503 (2016). https://doi.org/10.1109/ICSICT.2016.7998962; ISBN: 978-1-4673-9719-3.
  4. Mukhopadhyay, S.Mitra, Y.M. Ding, K.L. Ganapathi, D. Misra, N. Bhat, K. Tapily, R.D. Clark, S. Consiglio, C.S.Wajda, G. J. Leusink, “Effect of post plasma oxidation on Ge gate stacks interface formation”, ECS Transactions, 72 (4), 303-312 (2016). https://doi.org/10.1149/07204.0303ecst; ISSN: 1938-6737; Citation:9
  5. A. Jithin, K. L. Ganapathi, N. Bhat, S. Mohan, Y. Morozumi, and S. Kaushal, “Pulsed DC Magnetron Sputtered Rutile TiO2 Thin Films for Next Generation DRAM Capacitors,” Mater. Res. Soc. Symp. Proc., vol. 1561, Mrss13-1561-cc04-07 (2013). https://doi.org/10.1557/opl.2013.823

 ISSN: 1946-4274; Citation:1

  1. L. Ganapathi, N. Bhat, and S. Mohan, “Optimization of oxygen flow rate for e-beam evaporated HfO2 films”, Proc. Int. Conf. Emerging Electronics (ICEE), pp. 82-85 (2012). 10.1109/ICEmElec.2012.6636257; ISBN: 978-1-4673-3136-4; Citation:4
  2. Bhattacharjee, K. L. Ganapathi and N. Bhat, Realizing P-FETs and photodiodes on MoS2 through area-selective p-doping via vacancy engineering”, 75th Annual Device Research Conference (DRC), 17082365, 25-28 June 2017, University of Notre Dame, USA (2017). https://doi.org/10.1109/DRC.2017.7999418

 

  • Book Chapters: 2
  • Last 5 years (DST INSPIRE Faculty with IIT Madras Affiliation): 2

 

  1. Advanced Technologies for Next Generation Integrated Circuits, 159 (2020), Institution of Engineering and Technology (Institute of Engineering and Technology- IET)

      Chapter 7: Emerging high-k dielectrics for nanometer CMOS technologies and memory

      Devices.

      Authors: D. Misra, M. N. Bhuyian, Y. M. Ding, K. L. Ganapathi and N. Bhat

Editors: Ashok Srivastava and Saraju Mohanty

ISBN: 978-1-78561-664-8

  1. Printed and Flexible Sensor Technology- Fabrication and Applications, 2021, Institute of Physics Science (IOP Science)

Chapter 16: Fabrication and Characterization of CeO2 Thin Films-Based Oxygen Sensors.

Authors:  N. Ramshanker, K. L. Ganapathi, M.S. Bhat, and S. Mohan

Editors: Subhas Mukhopadhyay and Anindya Nag

ISBN: 978-0-7503-3439-6

 

  • Conferences (*presenting author): Total: 25
  • Last 5 years (DST INSPIRE Faculty with IIT Madras Affiliation): 14 (S. No: 1-14)
  1. Devendar, M R Shijeesh, T. Sakorikar, K. L. Ganapathi and M. Jaiswal, “Influence of confined water on the electromechanical response of reduced graphene oxide films on PDMS substrate”, 3rd Indian Materials Conclave and 32nd Annual General Meeting of MRSI, IIT Madras, India, December 20-23, 2021(Oral Presentation) (Virtual conference).
  2. Anju Saroha, L. Ganapathi , M. S. R. Rao, “White-light emission from Yttrium Iron Garnet (YIG, Y3 Fe5 O12 )”, 3rd Indian Materials Conclave and 32nd Annual General Meeting of MRSI, IIT Madras, India, December 20-23, 2021(Oral Presentation) (Virtual conference).
  3. Ramshanker, K. L. Ganapathi, M. S. Bhat, and S. Mohan, “Design of Microheaters with High Temperature Uniformity for Gas Sensors”, XXIst International Workshop on Physics of Semiconductor Devices (IWPSD-2021), IIT Delhi, India, December 14-17, 2021 (Virtual conference)- Paper ID- 281.
  4. Ramshankar*, K. L. Ganapathi, M.S. Bhat and S. Mohan, “Development of thin film based oxygen sensors for defence application”, National Symposium on Instrumentation (NSI-42), IISc, Bangalore, India, December 28-29, 2020(Virtual conference). (Best Paper Award).
  5. Ramshankar*, K. L. Ganapathi, M.S. Bhat and S. Mohan, “Development of thin film based hydrogen sensors for defence application”, National Symposium on Instrumentation (NSI-42), IISc, Bangalore, India, December 28-29, 2020 (Virtual conference).
  6. Jithin M.A*, L. Ganapathi, M. S. Bhat and S. Mohan, “Development of micro-combs using laser engraving with pulsed DC sputtered NiTi thin films”, National Symposium on Instrumentation (NSI-42), IISc, Bangalore, India, 28-29th December, 2020(Virtual conference).
  7. Ramshankar*, K. L. Ganapathi, M.S. Bhat and S. Mohan, “Performance Enhancement of CeO2 Thin Film Based Oxygen Sensors via TiO2 Doping”, International Conference on Emerging Electronics (ICEE), IIT, Delhi, India, November 26-28, 2020 (Virtual conference).
  8. Arora*, P.K. Nayak, T.Dixit, K. L. Ganapathi, A. Krishnan, and M.S.R.Rao, “Stacking angle dependent multiple excitonic resonances in bilayer tungsten diselenide”, Nanophotonics and Micro/Nano Optics International conference (NANOP-2019), Munich, Germany, Sept 4-6, 2019.
  9. Mufeed*, K.V.A. Kumar, K. L. Ganapathi, M. S. R. Rao and P.K.Nayak, “Frontiers in Materials from Basic Science to Real time Applications (F2DM)”, Jain University, Bangalore, India, March 13-16, 2019.
  10. L. Ganapathi, Marthando rath, M.S.R.Rao, PZT back gated multilayer MoS2 field effect transistors for next generation Non-volatile memory”, 1st Indian Materials Conclave and 32nd Annual General Meeting of MRSI, IISc, Bangalore, India, Febuary 12-15, 2019.
  11. K. Nayak, A. Arora*, T.Dixit, A.Krishnan, K. L. Ganapathi and M. S. R. Rao, Plasmon induced photoluminescence enhancement in atomically thin WSe2, 1st Indian Materials Conclave and 32nd Annual General Meeting of MRSI, IISc, Bangalore, India, Febuary 12-15, 2019.
  12. Jithin MA*, L. Ganapathi, N. K. Udaya Shankar and S. Mohan, “Fabrication and characterization of MIM Capacitors with Shape Memory NiTi film as an electrode”, International Conference on Emerging Electronics (ICEE), IISc, Bangalore, India, December 17-19, 2018.
  13. L. Ganapathi*, M. Rath, M. S. R. Rao, “PZT back gated layered MoS2 field effect transistors for ferroelectric memory”, Materials Research Symposium (MRS), Phoenix, USA, April 2-6, 2018.
  14. L. Ganapathi*, “Integration of high-k dielectrics into 2D materials for next generation electronics”, International Conference on Laser Deposition (iCOLD), IIT Madras, Chennai, India, November 20-22, 2017. (Invited talk)
  15. Ramshankar*, K. L. Ganapathi, M.S. Bhat and S. Mohan, “RF Sputtered CeO2 films for Oxygen sensors”, International Conference on Smart Materials Structures and Systems (ISSS), IISc, Bangalore, India, July 5-7, 2017.
  16. Jithin M. A* , K. L. Ganapathi , G. N. V. R. Vikram , N. K. Udayashankar and Mohan,” Design, Fabrication and integration of NiTi micro cantilevers and TiN thin film heaters”, International Conference on Smart Materials Structures and Systems (ISSS), IISc, Bangalore, India, July 5-7, 2017.
  17. Bhattacharjee*, K. L. Ganapathi and N. Bhat “Realizing P-FETs and Photodiodes on MoS2 through area-selective p-Doping via Vacancy Engineering”, Poster presentation at the 75th annual Device Research Conference at the University of Notre Dame, USA from June 25-28, 2017.
  18. Bhattacharjee,*K. L. Ganapathi, S. Mohan and N. Bhat “High Performance Functionalisation-free HfO2 Top Gate for MoS2 FETs with 6 nm EOT and SSmin 60 mV/decade”, Oral Presentation: 47th IEEE Semiconductors Interfaces Specialist Conference, San Diego, CA, Dec 7-10, 2016.
  19. *S. Bhattacharjee, L. Ganapathi, H. Chandrasekar, T. Paul, S. Mohan, Ghosh, S. Raghavan, N. Bhat,” Towards Nitride based Dielectric Environment for High Performance MoS2 FETs”,

Oral Presentation: 47th IEEE Semiconductors Interfaces Specialist Conference, San Diego, CA, Dec 7-10, 2016.

  1. Chandrasekhar, K. L. Ganapathi, S. Bhattacharjee, N. Bhat and D.N. Nath, “Optical Phonon limited high field transport in layered materials”, Materials Research Symposium (MRS Fall-2015), Boston, MI, USA, Nov-29 to Dec-4-6, 2015.
  2. *S. Bhattacharjee, *K. L. Ganapathi, D. N. Nath and N. Bhat “Surface States Engineering and Schottky Barrier Height Reduction in metal/MoS2 contacts through Sulfur Treatment”, Oral Presentation: 46th IEEE Semiconductors Interfaces Specialist Conference, Arlington, VA, 2015, http://arxiv.org/abs/1508.03795.(* Authors equally contributed)
  3. * L. Ganapathi, N. Bhat, and S. Mohan, “Reactive Electron-Beam Evaporated Hafnium Oxide Films for CMOS Gate Dielectric Applications,” ICMAT-2013, Singapore, June. (2013).
  4. *K. L. Ganapathi, M. A. Jithin, and S. Mohan, “Importance of residual gas analysis in ion-assisted electron-beam evaporated HfO2 thin films,” National Symp. Instrumentation, Belgaum, Jan. 2011.
  5. *K. L. Ganapathi, J. Bujjamma, and S. Mohan, “Ultrathin HfO2 films for high-k gate dielectric applications,” Int. Conf. Nano Sensors and Tech. (ICNST), Chandigarh, Oct. 2010.
  6. * Bujjamma, K. L. Ganapathi, and S. Mohan, “Ion-assisted deposition of HfO2 thin films for CMOS gate dielectric technologies,” ICMAT-2009, Singapore, Jun. 2009.
  7. Technologies Developed/Transferred:
  8. Developed MEMS based H2 gas sensor technology that is being transfer to an ISRO laboratory, Semiconductor Research Laboratory (SCL) Chandigarh; (Co-PI)–collaboration with CeNSE, IISc Bangalore.
  9. Developed SiO2/Ta2O5 multilayer based low loss and high power laser mirrors using Dual Ion Beam sputtering, and the technology was transferred to DRDO laboratory, Research Centre Imarat (RCI), Hyderabad.
  10. Developed Nanoscale high-k dielectric (HfO2) thin film platform form during Ph.D at IISc Bangalore. Many reserach groups at IISc Bangalore are using the same.
  11. Involved in the development of Diamond like carbon (DLC) films for high quality IR windows. Achieved around 94% of IR transmission in the wavelength range of 3 – 5 μm. Worked with Central Manufacturing Technology Institute (CMTI), Bangalore.